Nimewo Pati :
GB10SLT12-220
Manifakti :
GeneSiC Semiconductor
Deskripsyon :
DIODE SCHOTTKY 1200V 10A TO220AC
Kalite dyòd :
Silicon Carbide Schottky
Voltage - DC Ranvèse (Vr) (Max) :
1200V
Kouran - Mwayèn Rèktifye (Io) :
10A
Voltage - Forward (Vf) (Max) @ Si :
1.8V @ 10A
Vitès :
No Recovery Time > 500mA (Io)
Ranvèse Tan Reverse (trr) :
0ns
Kouran - Fèy Reverse @ Vr :
40µA @ 1200V
Kapasite @ Vr, F :
520pF @ 1V, 1MHz
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220AC
Operating Tanperati - Junction :
-55°C ~ 175°C