IDP08E65D2XKSA1 Pricing (USD) [59949PC Stock]
- 1 pcs$0.44737
- 10 pcs$0.39887
- 100 pcs$0.29417
- 500 pcs$0.24302
- 1,000 pcs$0.19186
- Nimewo Pati:
- IDP08E65D2XKSA1
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- DIODE GEN PURP 650V 8A TO220-2. Diodes - General Purpose, Power, Switching IGBT PRODUCTS
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Transistors - IGBTs - Single, Diodes - Rèkteur - Arrays, Transistors - IGBTs - Modil yo, Diodes - Bridge rèktifikateur, Diodes - Zener - Single, Diodes - Zener - Arrays and Transistors - IGBTs - Arrays ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IDP08E65D2XKSA1 electronic components. IDP08E65D2XKSA1 can be shipped within 24 hours after order. If you have any demands for IDP08E65D2XKSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IDP08E65D2XKSA1 Atribi pwodwi yo
Nimewo Pati :
IDP08E65D2XKSA1
Manifakti :
Infineon Technologies
Deskripsyon :
DIODE GEN PURP 650V 8A TO220-2
Seri :
-
Estati Pati :
Active
Kalite dyòd :
Standard
Voltage - DC Ranvèse (Vr) (Max) :
650V
Kouran - Mwayèn Rèktifye (Io) :
8A
Voltage - Forward (Vf) (Max) @ Si :
2.3V @ 3A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
40ns
Kouran - Fèy Reverse @ Vr :
40µA @ 650V
Kapasite @ Vr, F :
-
Mounting Kalite :
Through Hole
Pake / Ka :
TO-220-2
Pake Aparèy Founisè :
TO-220-2
Operating Tanperati - Junction :
-40°C ~ 175°C
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