Vishay Semiconductor Diodes Division - S3M-E3/57T

KEY Part #: K6455883

S3M-E3/57T Pricing (USD) [466650PC Stock]

  • 1 pcs$0.07926
  • 850 pcs$0.06907
  • 1,700 pcs$0.05180
  • 2,550 pcs$0.04748
  • 5,950 pcs$0.04461
  • 21,250 pcs$0.04173
  • 42,500 pcs$0.03837

Nimewo Pati:
S3M-E3/57T
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE GEN PURP 1KV 3A DO214AB. Rectifiers 3.0 Amp 1000 Volt
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - JFETs, Transistors - Bipolè (BJT) - Arrays, Modil pouvwa chofè, Tiristors - TRIACs, Tiristors - SCR, Transistors - IGBTs - Modil yo, Transistors - Bipolè (BJT) - RF and Transistors - FETs, MOSFETs - RF ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division S3M-E3/57T electronic components. S3M-E3/57T can be shipped within 24 hours after order. If you have any demands for S3M-E3/57T, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

S3M-E3/57T Atribi pwodwi yo

Nimewo Pati : S3M-E3/57T
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE GEN PURP 1KV 3A DO214AB
Seri : -
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 1000V
Kouran - Mwayèn Rèktifye (Io) : 3A
Voltage - Forward (Vf) (Max) @ Si : 1.15V @ 2.5A
Vitès : Standard Recovery >500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 2.5µs
Kouran - Fèy Reverse @ Vr : 10µA @ 1000V
Kapasite @ Vr, F : 60pF @ 4V, 1MHz
Mounting Kalite : Surface Mount
Pake / Ka : DO-214AB, SMC
Pake Aparèy Founisè : DO-214AB (SMC)
Operating Tanperati - Junction : -55°C ~ 150°C

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