Rohm Semiconductor - RJU002N06T106

KEY Part #: K6416917

RJU002N06T106 Pricing (USD) [1089230PC Stock]

  • 1 pcs$0.03754
  • 3,000 pcs$0.03735

Nimewo Pati:
RJU002N06T106
Manifakti:
Rohm Semiconductor
Detaye deskripsyon:
MOSFET N-CH 60V 200MA SOT-323.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Modil pouvwa chofè, Transistors - Bipolè (BJT) - Single, Diodes - RF, Tiristors - TRIACs, Transistors - FETs, MOSFETs - RF, Transistors - Pwogramasyon Unijunction, Transistors - Bipolè (BJT) - RF and Transistors - FETs, MOSFETs - Arrays ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

RJU002N06T106 Atribi pwodwi yo

Nimewo Pati : RJU002N06T106
Manifakti : Rohm Semiconductor
Deskripsyon : MOSFET N-CH 60V 200MA SOT-323
Seri : -
Estati Pati : Not For New Designs
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 200mA (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 2.5V, 4.5V
RD sou (Max) @ Id, Vgs : 2.3 Ohm @ 200mA, 4.5V
Vgs (th) (Max) @ Id : 1.5V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs : -
Vgs (Max) : ±12V
Antre kapasite (Ciss) (Max) @ Vds : 18pF @ 10V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 200mW (Ta)
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : UMT3
Pake / Ka : SC-70, SOT-323