Nimewo Pati :
SQM200N04-1M1L_GE3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET N-CH 40V 200A TO-263
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
40V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
200A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
1.1 mOhm @ 30A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
413nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
20655pF @ 25V
Disipasyon Pouvwa (Max) :
375W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
TO-263-7
Pake / Ka :
TO-263-7, D²Pak (6 Leads + Tab)