IXFN50N120SK Pricing (USD) [1566PC Stock]
- 1 pcs$27.64233
- Nimewo Pati:
- IXFN50N120SK
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET N-CH.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Single, Diodes - Rèkteur - Single, Diodes - Zener - Single, Transistors - Objektif espesyal, Tiristors - DIACs, SIDACs, Tiristors - TRIACs, Diodes - Varyab kapasite (Varicaps, Varactors) and Modil pouvwa chofè ...
- Avantaj konpetitif:
- We specialize in IXYS IXFN50N120SK electronic components. IXFN50N120SK can be shipped within 24 hours after order. If you have any demands for IXFN50N120SK, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFN50N120SK Atribi pwodwi yo
Nimewo Pati :
IXFN50N120SK
Manifakti :
IXYS
Deskripsyon :
MOSFET N-CH
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
SiC (Silicon Carbide Junction Transistor)
Drenaj nan Voltage Sous (Vdss) :
1200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
48A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
20V
RD sou (Max) @ Id, Vgs :
52 mOhm @ 40A, 20V
Vgs (th) (Max) @ Id :
2.8V @ 10mA
Chaje Gate (Qg) (Max) @ Vgs :
115nC @ 20V
Vgs (Max) :
+20V, -5V
Antre kapasite (Ciss) (Max) @ Vds :
1895pF @ 1000V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
-
Operating Tanperati :
-40°C ~ 175°C (TJ)
Mounting Kalite :
Chassis Mount
Pake Aparèy Founisè :
SOT-227B
Pake / Ka :
SOT-227-4, miniBLOC
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