[9481PC Stock]
- Nimewo Pati:
- STGD7NB120S-1
- Manifakti:
- STMicroelectronics
- Detaye deskripsyon:
- IGBT 1200V 10A 55W IPAK.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Single, Tiristors - SCR, Transistors - Bipolè (BJT) - Single, Tiristors - TRIACs, Transistors - Bipolè (BJT) - Arrays, Diodes - Rèkteur - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors) and Transistors - Bipolè (BJT) - RF ...
- Avantaj konpetitif:
- We specialize in STMicroelectronics STGD7NB120S-1 electronic components. STGD7NB120S-1 can be shipped within 24 hours after order. If you have any demands for STGD7NB120S-1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STGD7NB120S-1 Atribi pwodwi yo
Nimewo Pati :
STGD7NB120S-1
Manifakti :
STMicroelectronics
Deskripsyon :
IGBT 1200V 10A 55W IPAK
Seri :
PowerMESH™
Estati Pati :
Obsolete
Kalite IGBT :
-
Voltage - Pèseptè ki emèt deba (Max) :
1200V
Kouran - Pèseptè (Ic) (Max) :
10A
Kouran - Pèseptè batman (Icm) :
20A
Vce (sou) (Max) @ Vge, Ic :
2.1V @ 15V, 7A
Pouvwa - Max :
55W
Oblije chanje enèji :
15mJ (off)
Kalite Antre :
Standard
Gate chaje :
29nC
Td (on / off) @ 25 ° C :
570ns/-
Kondisyon egzamen an :
960V, 7A, 1 kOhm, 15V
Ranvèse Tan Reverse (trr) :
-
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Through Hole
Pake / Ka :
TO-251-3 Short Leads, IPak, TO-251AA
Pake Aparèy Founisè :
I-PAK
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