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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. EPC2038

EPC - EPC2038

KEY Part #: K6420599

EPC2038 Pricing (USD) [208752PC Stock]

  • 1 pcs$0.19588
  • 2,500 pcs$0.19490
Nimewo Pati:
EPC2038
Manifakti:
EPC
Detaye deskripsyon:
GAN TRANS 100V 2.8OHM BUMPED DIE.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Arrays, Transistors - IGBTs - Arrays, Transistors - JFETs, Modil pouvwa chofè, Tiristors - TRIACs, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Objektif espesyal and Tiristors - SCR ...
Avantaj konpetitif:
We specialize in EPC EPC2038 electronic components. EPC2038 can be shipped within 24 hours after order. If you have any demands for EPC2038, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

EPC2038 Atribi pwodwi yo

Nimewo Pati : EPC2038
Manifakti : EPC
Deskripsyon : GAN TRANS 100V 2.8OHM BUMPED DIE
Seri : eGaN®
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : GaNFET (Gallium Nitride)
Drenaj nan Voltage Sous (Vdss) : 100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 500mA (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 5V
RD sou (Max) @ Id, Vgs : 3.3 Ohm @ 50mA, 5V
Vgs (th) (Max) @ Id : 2.5V @ 20µA
Chaje Gate (Qg) (Max) @ Vgs : 0.044nC @ 5V
Vgs (Max) : +6V, -4V
Antre kapasite (Ciss) (Max) @ Vds : 8.4pF @ 50V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : -
Operating Tanperati : -40°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : Die
Pake / Ka : Die
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