TJ8S06M3L(T6L1,NQ) Pricing (USD) [202426PC Stock]
- 1 pcs$0.20200
- 2,000 pcs$0.20099
- Nimewo Pati:
- TJ8S06M3L(T6L1,NQ)
- Manifakti:
- Toshiba Semiconductor and Storage
- Detaye deskripsyon:
- MOSFET P-CH 60V 8A DPAK-3.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Tiristors - SCR, Transistors - FETs, MOSFETs - RF, Transistors - FETs, MOSFETs - Single, Transistors - Bipolè (BJT) - RF, Diodes - Zener - Single, Diodes - Varyab kapasite (Varicaps, Varactors) and Diodes - Bridge rèktifikateur ...
- Avantaj konpetitif:
- We specialize in Toshiba Semiconductor and Storage TJ8S06M3L(T6L1,NQ) electronic components. TJ8S06M3L(T6L1,NQ) can be shipped within 24 hours after order. If you have any demands for TJ8S06M3L(T6L1,NQ), Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TJ8S06M3L(T6L1,NQ) Atribi pwodwi yo
Nimewo Pati :
TJ8S06M3L(T6L1,NQ)
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
MOSFET P-CH 60V 8A DPAK-3
Seri :
U-MOSVI
Estati Pati :
Active
FET Kalite :
P-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
8A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
6V, 10V
RD sou (Max) @ Id, Vgs :
104 mOhm @ 4A, 10V
Vgs (th) (Max) @ Id :
3V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
19nC @ 10V
Vgs (Max) :
+10V, -20V
Antre kapasite (Ciss) (Max) @ Vds :
890pF @ 10V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
27W (Tc)
Operating Tanperati :
175°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
DPAK+
Pake / Ka :
TO-252-3, DPak (2 Leads + Tab), SC-63
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