Manifakti :
ON Semiconductor
Deskripsyon :
DIODE SCHOTTKY 650V 25A TO220-2
Kalite dyòd :
Silicon Carbide Schottky
Voltage - DC Ranvèse (Vr) (Max) :
650V
Kouran - Mwayèn Rèktifye (Io) :
25A (DC)
Voltage - Forward (Vf) (Max) @ Si :
1.75V @ 20A
Vitès :
No Recovery Time > 500mA (Io)
Ranvèse Tan Reverse (trr) :
0ns
Kouran - Fèy Reverse @ Vr :
200µA @ 650V
Kapasite @ Vr, F :
1085pF @ 1V, 100kHz
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220-2
Operating Tanperati - Junction :
-55°C ~ 175°C