MMIX1X200N60B3H1 Pricing (USD) [2455PC Stock]
- 1 pcs$18.48104
- 10 pcs$17.09345
- 25 pcs$15.70735
- 100 pcs$14.59854
- Nimewo Pati:
- MMIX1X200N60B3H1
- Manifakti:
- IXYS
- Detaye deskripsyon:
- IGBT 600V 175A 520W SMPD.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - FETs, MOSFETs - Single, Transistors - IGBTs - Single, Transistors - JFETs, Diodes - Bridge rèktifikateur, Tiristors - DIACs, SIDACs, Diodes - Varyab kapasite (Varicaps, Varactors) and Tiristors - TRIACs ...
- Avantaj konpetitif:
- We specialize in IXYS MMIX1X200N60B3H1 electronic components. MMIX1X200N60B3H1 can be shipped within 24 hours after order. If you have any demands for MMIX1X200N60B3H1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
MMIX1X200N60B3H1 Atribi pwodwi yo
Nimewo Pati :
MMIX1X200N60B3H1
Manifakti :
IXYS
Deskripsyon :
IGBT 600V 175A 520W SMPD
Seri :
GenX3™, XPT™
Estati Pati :
Active
Kalite IGBT :
-
Voltage - Pèseptè ki emèt deba (Max) :
600V
Kouran - Pèseptè (Ic) (Max) :
175A
Kouran - Pèseptè batman (Icm) :
1000A
Vce (sou) (Max) @ Vge, Ic :
1.7V @ 15V, 100A
Pouvwa - Max :
520W
Oblije chanje enèji :
2.85mJ (on), 2.9mJ (off)
Kalite Antre :
Standard
Gate chaje :
315nC
Td (on / off) @ 25 ° C :
48ns/160ns
Kondisyon egzamen an :
360V, 100A, 1 Ohm, 15V
Ranvèse Tan Reverse (trr) :
100ns
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
24-PowerSMD, 21 Leads
Pake Aparèy Founisè :
24-SMPD
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