IXYS - MMIX1X200N60B3H1

KEY Part #: K6422514

MMIX1X200N60B3H1 Pricing (USD) [2455PC Stock]

  • 1 pcs$18.48104
  • 10 pcs$17.09345
  • 25 pcs$15.70735
  • 100 pcs$14.59854

Nimewo Pati:
MMIX1X200N60B3H1
Manifakti:
IXYS
Detaye deskripsyon:
IGBT 600V 175A 520W SMPD.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Diodes - Rèkteur - Single, Diodes - Zener - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Pwogramasyon Unijunction, Modil pouvwa chofè, Transistors - IGBTs - Modil yo and Transistors - IGBTs - Arrays ...
Avantaj konpetitif:
We specialize in IXYS MMIX1X200N60B3H1 electronic components. MMIX1X200N60B3H1 can be shipped within 24 hours after order. If you have any demands for MMIX1X200N60B3H1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

MMIX1X200N60B3H1 Atribi pwodwi yo

Nimewo Pati : MMIX1X200N60B3H1
Manifakti : IXYS
Deskripsyon : IGBT 600V 175A 520W SMPD
Seri : GenX3™, XPT™
Estati Pati : Active
Kalite IGBT : -
Voltage - Pèseptè ki emèt deba (Max) : 600V
Kouran - Pèseptè (Ic) (Max) : 175A
Kouran - Pèseptè batman (Icm) : 1000A
Vce (sou) (Max) @ Vge, Ic : 1.7V @ 15V, 100A
Pouvwa - Max : 520W
Oblije chanje enèji : 2.85mJ (on), 2.9mJ (off)
Kalite Antre : Standard
Gate chaje : 315nC
Td (on / off) @ 25 ° C : 48ns/160ns
Kondisyon egzamen an : 360V, 100A, 1 Ohm, 15V
Ranvèse Tan Reverse (trr) : 100ns
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : 24-PowerSMD, 21 Leads
Pake Aparèy Founisè : 24-SMPD