Vishay Semiconductor Diodes Division - SBL8L40HE3/45

KEY Part #: K6445640

[2039PC Stock]


    Nimewo Pati:
    SBL8L40HE3/45
    Manifakti:
    Vishay Semiconductor Diodes Division
    Detaye deskripsyon:
    DIODE SCHOTTKY 40V 8A TO220AC.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Bipolè (BJT) - RF, Diodes - RF, Transistors - FETs, MOSFETs - RF, Transistors - Bipolè (BJT) - Single, Diodes - Bridge rèktifikateur, Transistors - IGBTs - Arrays and Transistors - FETs, MOSFETs - Single ...
    Avantaj konpetitif:
    We specialize in Vishay Semiconductor Diodes Division SBL8L40HE3/45 electronic components. SBL8L40HE3/45 can be shipped within 24 hours after order. If you have any demands for SBL8L40HE3/45, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    SBL8L40HE3/45 Atribi pwodwi yo

    Nimewo Pati : SBL8L40HE3/45
    Manifakti : Vishay Semiconductor Diodes Division
    Deskripsyon : DIODE SCHOTTKY 40V 8A TO220AC
    Seri : -
    Estati Pati : Obsolete
    Kalite dyòd : Schottky
    Voltage - DC Ranvèse (Vr) (Max) : 40V
    Kouran - Mwayèn Rèktifye (Io) : 8A
    Voltage - Forward (Vf) (Max) @ Si : 500mV @ 8A
    Vitès : Fast Recovery =< 500ns, > 200mA (Io)
    Ranvèse Tan Reverse (trr) : -
    Kouran - Fèy Reverse @ Vr : 1mA @ 40V
    Kapasite @ Vr, F : -
    Mounting Kalite : Through Hole
    Pake / Ka : TO-220-2
    Pake Aparèy Founisè : TO-220AC
    Operating Tanperati - Junction : -65°C ~ 125°C

    Ou ka enterese tou
    • PMEG2010AEK,115

      NXP USA Inc.

      DIODE SCHOTTKY 20V 1A SMT3.

    • BAT54WH6327XTSA1

      Infineon Technologies

      DIODE SCHOTTKY 30V 200MA SOT323.

    • IDB45E60ATMA1

      Infineon Technologies

      DIODE GEN PURP 600V 71A TO263-3.

    • IDB15E60

      Infineon Technologies

      DIODE GEN PURP 600V 29.2A TO263. Diodes - General Purpose, Power, Switching Fast Switching 600V EmCon Diode

    • IDB09E60ATMA1

      Infineon Technologies

      DIODE GEN PURP 600V 19.3A TO263.

    • SBL1030HE3/45

      Vishay Semiconductor Diodes Division

      DIODE SCHOTTKY 30V 10A TO220AB.