[3937PC Stock]
- Nimewo Pati:
- IRFH7911TR2PBF
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET 2N-CH 30V 13A/28A PQFN.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Arrays, Tiristors - SCR, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - FETs, MOSFETs - Arrays, Tiristors - SCR - Modil yo, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - FETs, MOSFETs - Single and Transistors - IGBTs - Arrays ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IRFH7911TR2PBF electronic components. IRFH7911TR2PBF can be shipped within 24 hours after order. If you have any demands for IRFH7911TR2PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFH7911TR2PBF Atribi pwodwi yo
Nimewo Pati :
IRFH7911TR2PBF
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET 2N-CH 30V 13A/28A PQFN
Seri :
HEXFET®
Estati Pati :
Obsolete
FET Kalite :
2 N-Channel (Dual)
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
13A, 28A
RD sou (Max) @ Id, Vgs :
8.6 mOhm @ 12A, 10V
Vgs (th) (Max) @ Id :
2.35V @ 25µA
Chaje Gate (Qg) (Max) @ Vgs :
12nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds :
1060pF @ 15V
Pouvwa - Max :
2.4W, 3.4W
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
18-PowerVQFN
Pake Aparèy Founisè :
PQFN (5x6)
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