Vishay Semiconductor Diodes Division - ESH2D-M3/5BT

KEY Part #: K6457875

ESH2D-M3/5BT Pricing (USD) [730521PC Stock]

  • 1 pcs$0.05063
  • 12,800 pcs$0.04588

Nimewo Pati:
ESH2D-M3/5BT
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE GEN PURP 200V 2A DO214AA. Rectifiers 2A,200V,25ns,UF Rect, SMD
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Objektif espesyal, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - FETs, MOSFETs - Arrays, Transistors - JFETs, Transistors - FETs, MOSFETs - RF, Transistors - Pwogramasyon Unijunction, Diodes - Varyab kapasite (Varicaps, Varactors) and Transistors - Bipolè (BJT) - Arrays, Pre-partial ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division ESH2D-M3/5BT electronic components. ESH2D-M3/5BT can be shipped within 24 hours after order. If you have any demands for ESH2D-M3/5BT, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

ESH2D-M3/5BT Atribi pwodwi yo

Nimewo Pati : ESH2D-M3/5BT
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE GEN PURP 200V 2A DO214AA
Seri : -
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 200V
Kouran - Mwayèn Rèktifye (Io) : 2A
Voltage - Forward (Vf) (Max) @ Si : 930mV @ 2A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 35ns
Kouran - Fèy Reverse @ Vr : 2µA @ 200V
Kapasite @ Vr, F : 30pF @ 4V, 1MHz
Mounting Kalite : Surface Mount
Pake / Ka : DO-214AA, SMB
Pake Aparèy Founisè : DO-214AA (SMB)
Operating Tanperati - Junction : -55°C ~ 175°C

Ou ka enterese tou
  • RGL34G-E3/98

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 400V 500MA DO213. Diodes - General Purpose, Power, Switching 400 Volt 0.5A 150ns 10 Amp IFSM

  • BYM07-300-E3/83

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 300V 500MA DO213. Rectifiers 300 Volt 0.5A 50ns Glass Passivated

  • BYM07-50-E3/98

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 50V 500MA DO213AA. Rectifiers 50 Volt 0.5A 50ns Glass Passivated

  • EGL34C-E3/98

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 150V 500MA DO213. Rectifiers 0.5Amp 150 Volt 50ns

  • EGL34F-E3/98

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 300V 500MA DO213. Rectifiers 0.5Amp 300 Volt 50ns

  • EGL34A-E3/83

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 50V 500MA DO213AA. Rectifiers 0.5 Amp 50 Volt 50ns