Infineon Technologies - FF800R17KF6CB2NOSA1

KEY Part #: K6532830

[1036PC Stock]


    Nimewo Pati:
    FF800R17KF6CB2NOSA1
    Manifakti:
    Infineon Technologies
    Detaye deskripsyon:
    IGBT MODULE VCES 1200V 800A.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Diodes - Rèkteur - Single, Transistors - Bipolè (BJT) - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Zener - Single, Transistors - FETs, MOSFETs - Arrays, Modil pouvwa chofè and Diodes - Zener - Arrays ...
    Avantaj konpetitif:
    We specialize in Infineon Technologies FF800R17KF6CB2NOSA1 electronic components. FF800R17KF6CB2NOSA1 can be shipped within 24 hours after order. If you have any demands for FF800R17KF6CB2NOSA1, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    FF800R17KF6CB2NOSA1 Atribi pwodwi yo

    Nimewo Pati : FF800R17KF6CB2NOSA1
    Manifakti : Infineon Technologies
    Deskripsyon : IGBT MODULE VCES 1200V 800A
    Seri : -
    Estati Pati : Obsolete
    Kalite IGBT : -
    Nou konte genyen : 2 Independent
    Voltage - Pèseptè ki emèt deba (Max) : 1700V
    Kouran - Pèseptè (Ic) (Max) : -
    Pouvwa - Max : 6250W
    Vce (sou) (Max) @ Vge, Ic : 3.1V @ 15V, 800A
    Kouran - Cutoff Pèseptè (Max) : 1.5mA
    Antre kapasite (Cies) @ Vce : 52nF @ 25V
    Antre : Standard
    NTC thermistor : No
    Operating Tanperati : -40°C ~ 125°C
    Mounting Kalite : Chassis Mount
    Pake / Ka : Module
    Pake Aparèy Founisè : Module

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