DMTH6010SCT Pricing (USD) [51384PC Stock]
- 1 pcs$0.72331
- 50 pcs$0.57949
- 100 pcs$0.50707
- 500 pcs$0.39322
- 1,000 pcs$0.29366
- Nimewo Pati:
- DMTH6010SCT
- Manifakti:
- Diodes Incorporated
- Detaye deskripsyon:
- MOSFET BVDSS 41V 60VTO220-3TU.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors), Tiristors - TRIACs, Transistors - Bipolè (BJT) - Arrays, Transistors - IGBTs - Arrays, Tiristors - SCR, Tiristors - SCR - Modil yo and Diodes - Rèkteur - Single ...
- Avantaj konpetitif:
- We specialize in Diodes Incorporated DMTH6010SCT electronic components. DMTH6010SCT can be shipped within 24 hours after order. If you have any demands for DMTH6010SCT, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMTH6010SCT Atribi pwodwi yo
Nimewo Pati :
DMTH6010SCT
Manifakti :
Diodes Incorporated
Deskripsyon :
MOSFET BVDSS 41V 60VTO220-3TU
Seri :
Automotive, AEC-Q101
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
100A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
7.2 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
36.3nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
1940pF @ 30V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
2.8W (Ta), 125W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220-3
Pake / Ka :
TO-220-3
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