Vishay Siliconix - SUM80090E-GE3

KEY Part #: K6418101

SUM80090E-GE3 Pricing (USD) [51526PC Stock]

  • 1 pcs$1.53804
  • 10 pcs$1.37322
  • 100 pcs$1.06820

Nimewo Pati:
SUM80090E-GE3
Manifakti:
Vishay Siliconix
Detaye deskripsyon:
MOSFET N-CH 150V 128A D2PAK.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Single, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - IGBTs - Modil yo, Diodes - Zener - Arrays, Diodes - Rèkteur - Arrays, Transistors - FETs, MOSFETs - Arrays and Transistors - Bipolè (BJT) - RF ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SUM80090E-GE3 Atribi pwodwi yo

Nimewo Pati : SUM80090E-GE3
Manifakti : Vishay Siliconix
Deskripsyon : MOSFET N-CH 150V 128A D2PAK
Seri : ThunderFET®
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 150V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 128A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 7.5V, 10V
RD sou (Max) @ Id, Vgs : 9 mOhm @ 30A, 10V
Vgs (th) (Max) @ Id : 5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 95nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 3425pF @ 75V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 375W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : D²PAK (TO-263)
Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB