Toshiba Semiconductor and Storage - TK6A60W,S4VX

KEY Part #: K6418089

TK6A60W,S4VX Pricing (USD) [51384PC Stock]

  • 1 pcs$0.84122
  • 50 pcs$0.83704

Nimewo Pati:
TK6A60W,S4VX
Manifakti:
Toshiba Semiconductor and Storage
Detaye deskripsyon:
MOSFET N CH 600V 6.2A TO-220SIS.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Single, Transistors - JFETs, Transistors - Bipolè (BJT) - Arrays, Diodes - Rèkteur - Arrays, Transistors - IGBTs - Modil yo, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Objektif espesyal and Diodes - Rèkteur - Single ...
Avantaj konpetitif:
We specialize in Toshiba Semiconductor and Storage TK6A60W,S4VX electronic components. TK6A60W,S4VX can be shipped within 24 hours after order. If you have any demands for TK6A60W,S4VX, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TK6A60W,S4VX Atribi pwodwi yo

Nimewo Pati : TK6A60W,S4VX
Manifakti : Toshiba Semiconductor and Storage
Deskripsyon : MOSFET N CH 600V 6.2A TO-220SIS
Seri : DTMOSIV
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 6.2A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 750 mOhm @ 3.1A, 10V
Vgs (th) (Max) @ Id : 3.7V @ 310µA
Chaje Gate (Qg) (Max) @ Vgs : 12nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 390pF @ 300V
Karakteristik FET : Super Junction
Disipasyon Pouvwa (Max) : 30W (Tc)
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-220SIS
Pake / Ka : TO-220-3 Full Pack

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