Nimewo Pati :
TK6A60W,S4VX
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
MOSFET N CH 600V 6.2A TO-220SIS
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
6.2A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
750 mOhm @ 3.1A, 10V
Vgs (th) (Max) @ Id :
3.7V @ 310µA
Chaje Gate (Qg) (Max) @ Vgs :
12nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
390pF @ 300V
Karakteristik FET :
Super Junction
Disipasyon Pouvwa (Max) :
30W (Tc)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220SIS
Pake / Ka :
TO-220-3 Full Pack