Nimewo Pati :
GB01SLT12-252
Manifakti :
GeneSiC Semiconductor
Deskripsyon :
DIODE SILICON 1.2KV 1A TO252
Kalite dyòd :
Silicon Carbide Schottky
Voltage - DC Ranvèse (Vr) (Max) :
1200V
Kouran - Mwayèn Rèktifye (Io) :
1A
Voltage - Forward (Vf) (Max) @ Si :
1.8V @ 1A
Vitès :
No Recovery Time > 500mA (Io)
Ranvèse Tan Reverse (trr) :
0ns
Kouran - Fèy Reverse @ Vr :
2µA @ 1200V
Kapasite @ Vr, F :
69pF @ 1V, 1MHz
Mounting Kalite :
Surface Mount
Pake / Ka :
TO-252-3, DPak (2 Leads + Tab), SC-63
Pake Aparèy Founisè :
TO-252
Operating Tanperati - Junction :
-55°C ~ 175°C