Manifakti :
Diodes Incorporated
Deskripsyon :
DIODE GEN PURP 600V 5A TO252-3
Voltage - DC Ranvèse (Vr) (Max) :
600V
Kouran - Mwayèn Rèktifye (Io) :
5A
Voltage - Forward (Vf) (Max) @ Si :
1.9V @ 5A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
30ns
Kouran - Fèy Reverse @ Vr :
10µA @ 600V
Kapasite @ Vr, F :
50pF @ 10V, 1MHz
Mounting Kalite :
Surface Mount
Pake / Ka :
TO-252-3, DPak (2 Leads + Tab), SC-63
Pake Aparèy Founisè :
TO-252-3
Operating Tanperati - Junction :
-65°C ~ 175°C