Vishay Semiconductor Diodes Division - EGL34FHE3/83

KEY Part #: K6447649

[1351PC Stock]


    Nimewo Pati:
    EGL34FHE3/83
    Manifakti:
    Vishay Semiconductor Diodes Division
    Detaye deskripsyon:
    DIODE GEN PURP 300V 500MA DO213.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Arrays, Diodes - Rèkteur - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Bipolè (BJT) - Single, Transistors - Bipolè (BJT) - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - IGBTs - Arrays and Diodes - Rèkteur - Single ...
    Avantaj konpetitif:
    We specialize in Vishay Semiconductor Diodes Division EGL34FHE3/83 electronic components. EGL34FHE3/83 can be shipped within 24 hours after order. If you have any demands for EGL34FHE3/83, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    EGL34FHE3/83 Atribi pwodwi yo

    Nimewo Pati : EGL34FHE3/83
    Manifakti : Vishay Semiconductor Diodes Division
    Deskripsyon : DIODE GEN PURP 300V 500MA DO213
    Seri : SUPERECTIFIER®
    Estati Pati : Discontinued at Digi-Key
    Kalite dyòd : Standard
    Voltage - DC Ranvèse (Vr) (Max) : 300V
    Kouran - Mwayèn Rèktifye (Io) : 500mA
    Voltage - Forward (Vf) (Max) @ Si : 1.35V @ 500mA
    Vitès : Fast Recovery =< 500ns, > 200mA (Io)
    Ranvèse Tan Reverse (trr) : 50ns
    Kouran - Fèy Reverse @ Vr : 5µA @ 300V
    Kapasite @ Vr, F : 7pF @ 4V, 1MHz
    Mounting Kalite : Surface Mount
    Pake / Ka : DO-213AA (Glass)
    Pake Aparèy Founisè : DO-213AA (GL34)
    Operating Tanperati - Junction : -65°C ~ 175°C

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