Nimewo Pati :
RGF1KHE3/67A
Manifakti :
Vishay Semiconductor Diodes Division
Deskripsyon :
DIODE GEN PURP 800V 1A DO214BA
Estati Pati :
Discontinued at Digi-Key
Voltage - DC Ranvèse (Vr) (Max) :
800V
Kouran - Mwayèn Rèktifye (Io) :
1A
Voltage - Forward (Vf) (Max) @ Si :
1.3V @ 1A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
500ns
Kouran - Fèy Reverse @ Vr :
5µA @ 800V
Kapasite @ Vr, F :
8.5pF @ 4V, 1MHz
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
DO-214BA (GF1)
Operating Tanperati - Junction :
-65°C ~ 175°C