Vishay Semiconductor Diodes Division - VS-GT200TP065N

KEY Part #: K6533269

VS-GT200TP065N Pricing (USD) [810PC Stock]

  • 1 pcs$57.25217
  • 24 pcs$47.45463

Nimewo Pati:
VS-GT200TP065N
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
IGBT.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Single, Transistors - Pwogramasyon Unijunction, Tiristors - SCR, Transistors - Bipolè (BJT) - RF, Transistors - Objektif espesyal, Diodes - Zener - Arrays, Transistors - IGBTs - Modil yo and Transistors - Bipolè (BJT) - Single ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division VS-GT200TP065N electronic components. VS-GT200TP065N can be shipped within 24 hours after order. If you have any demands for VS-GT200TP065N, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

VS-GT200TP065N Atribi pwodwi yo

Nimewo Pati : VS-GT200TP065N
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : IGBT
Seri : -
Estati Pati : Active
Kalite IGBT : Trench
Nou konte genyen : Half Bridge
Voltage - Pèseptè ki emèt deba (Max) : 650V
Kouran - Pèseptè (Ic) (Max) : 221A
Pouvwa - Max : 600W
Vce (sou) (Max) @ Vge, Ic : 2.12V @ 15V, 200A
Kouran - Cutoff Pèseptè (Max) : 60µA
Antre kapasite (Cies) @ Vce : -
Antre : Standard
NTC thermistor : No
Operating Tanperati : -40°C ~ 175°C (TJ)
Mounting Kalite : Chassis Mount
Pake / Ka : INT-A-Pak
Pake Aparèy Founisè : INT-A-PAK

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