Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET P-CH 100V 1A 4-DIP
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
1A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
-
RD sou (Max) @ Id, Vgs :
600 mOhm @ 600mA, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
18nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
390pF @ 25V
Disipasyon Pouvwa (Max) :
-
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
4-HVMDIP
Pake / Ka :
4-DIP (0.300", 7.62mm)