BYM10-600-E3/97 Pricing (USD) [959192PC Stock]
- 1 pcs$0.03856
- 10,000 pcs$0.03788
- Nimewo Pati:
- BYM10-600-E3/97
- Manifakti:
- Vishay Semiconductor Diodes Division
- Detaye deskripsyon:
- DIODE GEN PURP 600V 1A DO213AB. Rectifiers 600 Volt 1.0 Amp Glass Passivated
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Diodes - Rèkteur - Single, Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - Arrays, Tiristors - SCR - Modil yo, Diodes - Bridge rèktifikateur, Transistors - IGBTs - Modil yo and Tiristors - SCR ...
- Avantaj konpetitif:
- We specialize in Vishay Semiconductor Diodes Division BYM10-600-E3/97 electronic components. BYM10-600-E3/97 can be shipped within 24 hours after order. If you have any demands for BYM10-600-E3/97, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BYM10-600-E3/97 Atribi pwodwi yo
Nimewo Pati :
BYM10-600-E3/97
Manifakti :
Vishay Semiconductor Diodes Division
Deskripsyon :
DIODE GEN PURP 600V 1A DO213AB
Seri :
SUPERECTIFIER®
Estati Pati :
Active
Kalite dyòd :
Standard
Voltage - DC Ranvèse (Vr) (Max) :
600V
Kouran - Mwayèn Rèktifye (Io) :
1A
Voltage - Forward (Vf) (Max) @ Si :
1.1V @ 1A
Vitès :
Standard Recovery >500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
-
Kouran - Fèy Reverse @ Vr :
10µA @ 600V
Kapasite @ Vr, F :
8pF @ 4V, 1MHz
Mounting Kalite :
Surface Mount
Pake / Ka :
DO-213AB, MELF (Glass)
Pake Aparèy Founisè :
DO-213AB
Operating Tanperati - Junction :
-65°C ~ 175°C
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BYM10-600-E3/97
Vishay Semiconductor Diodes Division
DIODE GEN PURP 600V 1A DO213AB. Rectifiers 600 Volt 1.0 Amp Glass Passivated
-
BYM11-1000-E3/97
Vishay Semiconductor Diodes Division
DIODE GEN PURP 1KV 1A DO213AB. Rectifiers 1000 Volt 1.0A 500ns Glass Passivated
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