NSB8JTHE3_A/I Pricing (USD) [104538PC Stock]
- 1 pcs$0.37403
- 800 pcs$0.33139
- Nimewo Pati:
- NSB8JTHE3_A/I
- Manifakti:
- Vishay Semiconductor Diodes Division
- Detaye deskripsyon:
- DIODE GEN PURP 600V 8A TO263AB. Rectifiers 8A 600V Glass Psvtd AEC-Q101 Qualified
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR - Modil yo, Diodes - RF, Diodes - Zener - Arrays, Transistors - Bipolè (BJT) - Arrays, Transistors - FETs, MOSFETs - RF, Transistors - IGBTs - Arrays, Diodes - Rèkteur - Arrays and Transistors - Pwogramasyon Unijunction ...
- Avantaj konpetitif:
- We specialize in Vishay Semiconductor Diodes Division NSB8JTHE3_A/I electronic components. NSB8JTHE3_A/I can be shipped within 24 hours after order. If you have any demands for NSB8JTHE3_A/I, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
NSB8JTHE3_A/I Atribi pwodwi yo
Nimewo Pati :
NSB8JTHE3_A/I
Manifakti :
Vishay Semiconductor Diodes Division
Deskripsyon :
DIODE GEN PURP 600V 8A TO263AB
Seri :
Automotive, AEC-Q101
Estati Pati :
Active
Kalite dyòd :
Standard
Voltage - DC Ranvèse (Vr) (Max) :
600V
Kouran - Mwayèn Rèktifye (Io) :
8A
Voltage - Forward (Vf) (Max) @ Si :
1.1V @ 8A
Vitès :
Standard Recovery >500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
-
Kouran - Fèy Reverse @ Vr :
10µA @ 600V
Kapasite @ Vr, F :
55pF @ 4V, 1MHz
Mounting Kalite :
Surface Mount
Pake / Ka :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Pake Aparèy Founisè :
TO-263AB
Operating Tanperati - Junction :
-55°C ~ 150°C
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