TPD3215M Pricing (USD) [522PC Stock]
- 1 pcs$97.80421
- 10 pcs$93.08330
- Nimewo Pati:
- TPD3215M
- Manifakti:
- Transphorm
- Detaye deskripsyon:
- GANFET 2N-CH 600V 70A MODULE.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Single, Diodes - Bridge rèktifikateur, Transistors - FETs, MOSFETs - RF, Transistors - Bipolè (BJT) - Arrays, Transistors - IGBTs - Modil yo, Transistors - IGBTs - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial and Diodes - RF ...
- Avantaj konpetitif:
- We specialize in Transphorm TPD3215M electronic components. TPD3215M can be shipped within 24 hours after order. If you have any demands for TPD3215M, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TPD3215M Atribi pwodwi yo
Nimewo Pati :
TPD3215M
Manifakti :
Transphorm
Deskripsyon :
GANFET 2N-CH 600V 70A MODULE
Seri :
-
Estati Pati :
Obsolete
FET Kalite :
2 N-Channel (Half Bridge)
Karakteristik FET :
GaNFET (Gallium Nitride)
Drenaj nan Voltage Sous (Vdss) :
600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
70A (Tc)
RD sou (Max) @ Id, Vgs :
34 mOhm @ 30A, 8V
Vgs (th) (Max) @ Id :
-
Chaje Gate (Qg) (Max) @ Vgs :
28nC @ 8V
Antre kapasite (Ciss) (Max) @ Vds :
2260pF @ 100V
Pouvwa - Max :
470W
Operating Tanperati :
-40°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake / Ka :
Module
Pake Aparèy Founisè :
Module
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