Transphorm - TPD3215M

KEY Part #: K6522772

TPD3215M Pricing (USD) [522PC Stock]

  • 1 pcs$97.80421
  • 10 pcs$93.08330

Nimewo Pati:
TPD3215M
Manifakti:
Transphorm
Detaye deskripsyon:
GANFET 2N-CH 600V 70A MODULE.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Single, Diodes - Varyab kapasite (Varicaps, Varactors), Tiristors - TRIACs, Transistors - IGBTs - Single, Tiristors - SCR - Modil yo, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - JFETs and Transistors - FETs, MOSFETs - Arrays ...
Avantaj konpetitif:
We specialize in Transphorm TPD3215M electronic components. TPD3215M can be shipped within 24 hours after order. If you have any demands for TPD3215M, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TPD3215M Atribi pwodwi yo

Nimewo Pati : TPD3215M
Manifakti : Transphorm
Deskripsyon : GANFET 2N-CH 600V 70A MODULE
Seri : -
Estati Pati : Obsolete
FET Kalite : 2 N-Channel (Half Bridge)
Karakteristik FET : GaNFET (Gallium Nitride)
Drenaj nan Voltage Sous (Vdss) : 600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 70A (Tc)
RD sou (Max) @ Id, Vgs : 34 mOhm @ 30A, 8V
Vgs (th) (Max) @ Id : -
Chaje Gate (Qg) (Max) @ Vgs : 28nC @ 8V
Antre kapasite (Ciss) (Max) @ Vds : 2260pF @ 100V
Pouvwa - Max : 470W
Operating Tanperati : -40°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake / Ka : Module
Pake Aparèy Founisè : Module