Diodes Incorporated - DMNH6012LK3Q-13

KEY Part #: K6393820

DMNH6012LK3Q-13 Pricing (USD) [150383PC Stock]

  • 1 pcs$0.24595
  • 2,500 pcs$0.21317

Nimewo Pati:
DMNH6012LK3Q-13
Manifakti:
Diodes Incorporated
Detaye deskripsyon:
MOSFET NCH 60V 80A TO252.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - RF, Tiristors - TRIACs, Diodes - Bridge rèktifikateur, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - RF and Transistors - IGBTs - Modil yo ...
Avantaj konpetitif:
We specialize in Diodes Incorporated DMNH6012LK3Q-13 electronic components. DMNH6012LK3Q-13 can be shipped within 24 hours after order. If you have any demands for DMNH6012LK3Q-13, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMNH6012LK3Q-13 Atribi pwodwi yo

Nimewo Pati : DMNH6012LK3Q-13
Manifakti : Diodes Incorporated
Deskripsyon : MOSFET NCH 60V 80A TO252
Seri : Automotive, AEC-Q101
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 80A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 12 mOhm @ 25A, 10V
Vgs (th) (Max) @ Id : 3V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 35.2nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 1926pF @ 30V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 2W (Ta)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : TO-252-4L
Pake / Ka : TO-252-5, DPak (4 Leads + Tab), TO-252AD