IRFIBE30GPBF Pricing (USD) [30363PC Stock]
- 1 pcs$1.18548
- 10 pcs$1.01724
- 100 pcs$0.81751
- 500 pcs$0.63583
- 1,000 pcs$0.52683
- Nimewo Pati:
- IRFIBE30GPBF
- Manifakti:
- Vishay Siliconix
- Detaye deskripsyon:
- MOSFET N-CH 800V 2.1A TO220FP.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Diodes - RF, Tiristors - DIACs, SIDACs, Transistors - FETs, MOSFETs - RF, Transistors - FETs, MOSFETs - Arrays, Tiristors - TRIACs, Transistors - JFETs and Tiristors - SCR - Modil yo ...
- Avantaj konpetitif:
- We specialize in Vishay Siliconix IRFIBE30GPBF electronic components. IRFIBE30GPBF can be shipped within 24 hours after order. If you have any demands for IRFIBE30GPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFIBE30GPBF Atribi pwodwi yo
Nimewo Pati :
IRFIBE30GPBF
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET N-CH 800V 2.1A TO220FP
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
800V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
2.1A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
3 Ohm @ 1.3A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
78nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
1300pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
35W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220-3
Pake / Ka :
TO-220-3 Full Pack, Isolated Tab
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