Taiwan Semiconductor Corporation - ES3DBHM4G

KEY Part #: K6439090

ES3DBHM4G Pricing (USD) [501481PC Stock]

  • 1 pcs$0.07376

Nimewo Pati:
ES3DBHM4G
Manifakti:
Taiwan Semiconductor Corporation
Detaye deskripsyon:
DIODE GEN PURP 200V 3A DO214AA.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Arrays, Transistors - FETs, MOSFETs - Single, Diodes - Zener - Arrays, Tiristors - SCR, Tiristors - SCR - Modil yo, Diodes - RF, Transistors - FETs, MOSFETs - RF and Diodes - Zener - Single ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

ES3DBHM4G Atribi pwodwi yo

Nimewo Pati : ES3DBHM4G
Manifakti : Taiwan Semiconductor Corporation
Deskripsyon : DIODE GEN PURP 200V 3A DO214AA
Seri : Automotive, AEC-Q101
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 200V
Kouran - Mwayèn Rèktifye (Io) : 3A
Voltage - Forward (Vf) (Max) @ Si : 1V @ 3A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 35ns
Kouran - Fèy Reverse @ Vr : 10µA @ 200V
Kapasite @ Vr, F : 46pF @ 4V, 1MHz
Mounting Kalite : Surface Mount
Pake / Ka : DO-214AA, SMB
Pake Aparèy Founisè : DO-214AA (SMB)
Operating Tanperati - Junction : -55°C ~ 150°C

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