RS3JHE3_A/I Pricing (USD) [415538PC Stock]
- 1 pcs$0.09393
- 3,500 pcs$0.09346
- Nimewo Pati:
- RS3JHE3_A/I
- Manifakti:
- Vishay Semiconductor Diodes Division
- Detaye deskripsyon:
- DIODE GEN PURP 600V 3A DO214AB. Rectifiers 600 Volt 3.0A 250ns 100 Amp IFSM
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - JFETs, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - FETs, MOSFETs - RF, Transistors - IGBTs - Arrays, Diodes - RF, Tiristors - SCR and Diodes - Zener - Arrays ...
- Avantaj konpetitif:
- We specialize in Vishay Semiconductor Diodes Division RS3JHE3_A/I electronic components. RS3JHE3_A/I can be shipped within 24 hours after order. If you have any demands for RS3JHE3_A/I, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RS3JHE3_A/I Atribi pwodwi yo
Nimewo Pati :
RS3JHE3_A/I
Manifakti :
Vishay Semiconductor Diodes Division
Deskripsyon :
DIODE GEN PURP 600V 3A DO214AB
Seri :
Automotive, AEC-Q101
Estati Pati :
Active
Kalite dyòd :
Standard
Voltage - DC Ranvèse (Vr) (Max) :
600V
Kouran - Mwayèn Rèktifye (Io) :
3A
Voltage - Forward (Vf) (Max) @ Si :
1.3V @ 2.5A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
250ns
Kouran - Fèy Reverse @ Vr :
10µA @ 600V
Kapasite @ Vr, F :
34pF @ 4V, 1MHz
Mounting Kalite :
Surface Mount
Pake / Ka :
DO-214AB, SMC
Pake Aparèy Founisè :
DO-214AB (SMC)
Operating Tanperati - Junction :
-55°C ~ 150°C
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