Vishay Siliconix - SI4925BDY-T1-GE3

KEY Part #: K6522552

SI4925BDY-T1-GE3 Pricing (USD) [114503PC Stock]

  • 1 pcs$0.32464
  • 2,500 pcs$0.32302

Nimewo Pati:
SI4925BDY-T1-GE3
Manifakti:
Vishay Siliconix
Detaye deskripsyon:
MOSFET 2P-CH 30V 5.3A 8-SOIC.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Objektif espesyal, Transistors - JFETs, Transistors - FETs, MOSFETs - RF, Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - Zener - Single, Transistors - Bipolè (BJT) - RF, Diodes - Zener - Arrays and Transistors - Bipolè (BJT) - Arrays ...
Avantaj konpetitif:
We specialize in Vishay Siliconix SI4925BDY-T1-GE3 electronic components. SI4925BDY-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI4925BDY-T1-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SI4925BDY-T1-GE3 Atribi pwodwi yo

Nimewo Pati : SI4925BDY-T1-GE3
Manifakti : Vishay Siliconix
Deskripsyon : MOSFET 2P-CH 30V 5.3A 8-SOIC
Seri : TrenchFET®
Estati Pati : Active
FET Kalite : 2 P-Channel (Dual)
Karakteristik FET : Logic Level Gate
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 5.3A
RD sou (Max) @ Id, Vgs : 25 mOhm @ 7.1A, 10V
Vgs (th) (Max) @ Id : 3V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 50nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds : -
Pouvwa - Max : 1.1W
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : 8-SOIC (0.154", 3.90mm Width)
Pake Aparèy Founisè : 8-SO