[105PC Stock]
- Nimewo Pati:
- BSS119 E7796
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N-CH 100V 170MA SOT-23.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Arrays, Modil pouvwa chofè, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Tiristors - TRIACs, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - IGBTs - Arrays, Diodes - Rèkteur - Single and Diodes - RF ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies BSS119 E7796 electronic components. BSS119 E7796 can be shipped within 24 hours after order. If you have any demands for BSS119 E7796, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSS119 E7796 Atribi pwodwi yo
Nimewo Pati :
BSS119 E7796
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 100V 170MA SOT-23
Seri :
SIPMOS®
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
170mA (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
6 Ohm @ 170mA, 10V
Vgs (th) (Max) @ Id :
2.3V @ 50µA
Chaje Gate (Qg) (Max) @ Vgs :
2.5nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
78pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
360mW (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
SOT-23-3
Pake / Ka :
TO-236-3, SC-59, SOT-23-3
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