DMT10H010SPS-13 Pricing (USD) [158081PC Stock]
- 1 pcs$0.23398
- Nimewo Pati:
- DMT10H010SPS-13
- Manifakti:
- Diodes Incorporated
- Detaye deskripsyon:
- MOSFETN-CH 100VPOWERDI5060-8.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Tiristors - SCR, Modil pouvwa chofè, Transistors - Objektif espesyal, Transistors - Bipolè (BJT) - Single, Diodes - Rèkteur - Single, Transistors - FETs, MOSFETs - Single and Transistors - FETs, MOSFETs - Arrays ...
- Avantaj konpetitif:
- We specialize in Diodes Incorporated DMT10H010SPS-13 electronic components. DMT10H010SPS-13 can be shipped within 24 hours after order. If you have any demands for DMT10H010SPS-13, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMT10H010SPS-13 Atribi pwodwi yo
Nimewo Pati :
DMT10H010SPS-13
Manifakti :
Diodes Incorporated
Deskripsyon :
MOSFETN-CH 100VPOWERDI5060-8
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
10.7A (Ta), 113A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
6V, 10V
RD sou (Max) @ Id, Vgs :
8.8 mOhm @ 13A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
56.4nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
4.468nF @ 50V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
1.2W (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
PowerDI5060-8
Pake / Ka :
8-PowerTDFN
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