Infineon Technologies - IRG7PH35UDPBF

KEY Part #: K6422724

IRG7PH35UDPBF Pricing (USD) [11807PC Stock]

  • 1 pcs$3.17304
  • 10 pcs$2.86631
  • 100 pcs$2.37299
  • 500 pcs$2.06636
  • 1,000 pcs$1.79974

Nimewo Pati:
IRG7PH35UDPBF
Manifakti:
Infineon Technologies
Detaye deskripsyon:
IGBT 1200V 50A 180W TO247AC.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Single, Transistors - Pwogramasyon Unijunction, Tiristors - TRIACs, Transistors - FETs, MOSFETs - Single, Transistors - FETs, MOSFETs - RF, Diodes - Zener - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial and Transistors - IGBTs - Single ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRG7PH35UDPBF Atribi pwodwi yo

Nimewo Pati : IRG7PH35UDPBF
Manifakti : Infineon Technologies
Deskripsyon : IGBT 1200V 50A 180W TO247AC
Seri : -
Estati Pati : Active
Kalite IGBT : Trench
Voltage - Pèseptè ki emèt deba (Max) : 1200V
Kouran - Pèseptè (Ic) (Max) : 50A
Kouran - Pèseptè batman (Icm) : 60A
Vce (sou) (Max) @ Vge, Ic : 2.2V @ 15V, 20A
Pouvwa - Max : 180W
Oblije chanje enèji : 1.06mJ (on), 620µJ (off)
Kalite Antre : Standard
Gate chaje : 85nC
Td (on / off) @ 25 ° C : 30ns/160ns
Kondisyon egzamen an : 600V, 20A, 10 Ohm, 15V
Ranvèse Tan Reverse (trr) : 105ns
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake / Ka : TO-247-3
Pake Aparèy Founisè : TO-247AC