DMTH10H010SCT Pricing (USD) [68703PC Stock]
- 1 pcs$0.56912
- Nimewo Pati:
- DMTH10H010SCT
- Manifakti:
- Diodes Incorporated
- Detaye deskripsyon:
- MOSFET BVDSS 61V-100V TO220AB T.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Arrays, Transistors - FETs, MOSFETs - RF, Diodes - RF, Transistors - Bipolè (BJT) - RF, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - JFETs and Diodes - Zener - Arrays ...
- Avantaj konpetitif:
- We specialize in Diodes Incorporated DMTH10H010SCT electronic components. DMTH10H010SCT can be shipped within 24 hours after order. If you have any demands for DMTH10H010SCT, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMTH10H010SCT Atribi pwodwi yo
Nimewo Pati :
DMTH10H010SCT
Manifakti :
Diodes Incorporated
Deskripsyon :
MOSFET BVDSS 61V-100V TO220AB T
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
100A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
9.5 mOhm @ 13A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
56.4nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
4468pF @ 50V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
2.5W (Ta), 187W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220AB
Pake / Ka :
TO-220-3
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