Nimewo Pati :
V8P10-E3/86A
Manifakti :
Vishay Semiconductor Diodes Division
Deskripsyon :
DIODE SCHOTTKY 100V 8A TO277A
Voltage - DC Ranvèse (Vr) (Max) :
100V
Kouran - Mwayèn Rèktifye (Io) :
8A
Voltage - Forward (Vf) (Max) @ Si :
680mV @ 8A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
-
Kouran - Fèy Reverse @ Vr :
70µA @ 100V
Mounting Kalite :
Surface Mount
Pake / Ka :
TO-277, 3-PowerDFN
Pake Aparèy Founisè :
TO-277A (SMPC)
Operating Tanperati - Junction :
-40°C ~ 150°C