Nimewo Pati :
GHR16-E3/73
Manifakti :
Vishay Semiconductor Diodes Division
Deskripsyon :
DIODE GEN PURP 1.6KV 500MA R1
Voltage - DC Ranvèse (Vr) (Max) :
1600V
Kouran - Mwayèn Rèktifye (Io) :
500mA
Voltage - Forward (Vf) (Max) @ Si :
1.5V @ 500mA
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
300ns
Kouran - Fèy Reverse @ Vr :
5µA @ 1600V
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
R-1
Operating Tanperati - Junction :
-65°C ~ 175°C