Manifakti :
GeneSiC Semiconductor
Deskripsyon :
DIODE MODULE 200V 300A 2TOWER
Konfigirasyon dyòd :
1 Pair Common Cathode
Voltage - DC Ranvèse (Vr) (Max) :
200V
Kouran - Mwayèn Rèktifye (Io) (pou chak dyòd) :
300A (DC)
Voltage - Forward (Vf) (Max) @ Si :
1.3V @ 100A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
90ns
Kouran - Fèy Reverse @ Vr :
25µA @ 50V
Operating Tanperati - Junction :
-55°C ~ 150°C
Mounting Kalite :
Chassis Mount
Pake Aparèy Founisè :
Twin Tower