Vishay Semiconductor Diodes Division - VS-20ETF02PBF

KEY Part #: K6445470

VS-20ETF02PBF Pricing (USD) [2097PC Stock]

  • 1,000 pcs$0.84508

Nimewo Pati:
VS-20ETF02PBF
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE GEN PURP 200V 20A TO220AC.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR - Modil yo, Tiristors - TRIACs, Transistors - Objektif espesyal, Transistors - Bipolè (BJT) - Single, Transistors - FETs, MOSFETs - Single, Diodes - Rèkteur - Arrays, Transistors - FETs, MOSFETs - Arrays and Transistors - Bipolè (BJT) - Arrays ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division VS-20ETF02PBF electronic components. VS-20ETF02PBF can be shipped within 24 hours after order. If you have any demands for VS-20ETF02PBF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

VS-20ETF02PBF Atribi pwodwi yo

Nimewo Pati : VS-20ETF02PBF
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE GEN PURP 200V 20A TO220AC
Seri : -
Estati Pati : Discontinued at Digi-Key
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 200V
Kouran - Mwayèn Rèktifye (Io) : 20A
Voltage - Forward (Vf) (Max) @ Si : 1.3V @ 20A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 160ns
Kouran - Fèy Reverse @ Vr : 100µA @ 200V
Kapasite @ Vr, F : -
Mounting Kalite : Through Hole
Pake / Ka : TO-220-2
Pake Aparèy Founisè : TO-220AC
Operating Tanperati - Junction : -40°C ~ 150°C

Ou ka enterese tou
  • C2D05120E

    Cree/Wolfspeed

    DIODE SCHOTTKY 1.2KV 17.5A TO252.

  • VS-20ETF04FPPBF

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 400V 20A TO220FP.

  • BAT54WH6327XTSA1

    Infineon Technologies

    DIODE SCHOTTKY 30V 200MA SOT323.

  • IDB23E60ATMA1

    Infineon Technologies

    DIODE GEN PURP 600V 41A TO263-3.

  • IDB12E120ATMA1

    Infineon Technologies

    DIODE GEN PURP 1.2KV 28A TO263-3.

  • IDB45E60ATMA1

    Infineon Technologies

    DIODE GEN PURP 600V 71A TO263-3.