Vishay Semiconductor Diodes Division - V20120SHM3/4W

KEY Part #: K6443203

V20120SHM3/4W Pricing (USD) [2872PC Stock]

  • 1,000 pcs$0.27520

Nimewo Pati:
V20120SHM3/4W
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE SCHOTTKY 20A 120V TO-220AB.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Single, Diodes - Bridge rèktifikateur, Transistors - JFETs, Transistors - Bipolè (BJT) - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - IGBTs - Arrays, Diodes - Rèkteur - Single and Diodes - Zener - Arrays ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division V20120SHM3/4W electronic components. V20120SHM3/4W can be shipped within 24 hours after order. If you have any demands for V20120SHM3/4W, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

V20120SHM3/4W Atribi pwodwi yo

Nimewo Pati : V20120SHM3/4W
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE SCHOTTKY 20A 120V TO-220AB
Seri : Automotive, AEC-Q101
Estati Pati : Obsolete
Kalite dyòd : Schottky
Voltage - DC Ranvèse (Vr) (Max) : 120V
Kouran - Mwayèn Rèktifye (Io) : 20A
Voltage - Forward (Vf) (Max) @ Si : 1.12V @ 20A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : -
Kouran - Fèy Reverse @ Vr : 300µA @ 120V
Kapasite @ Vr, F : -
Mounting Kalite : Through Hole
Pake / Ka : TO-220-3
Pake Aparèy Founisè : TO-220AB
Operating Tanperati - Junction : -40°C ~ 150°C

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