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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

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  1. Lakay
  2. Pwodwi yo
  3. DRAM
  4. DDR3
  5. K4B4G1646E-BMK0

Samsung Semiconductor - K4B4G1646E-BMK0

KEY Part #: K7359701

[19193PC Stock]

    Nimewo Pati:
    K4B4G1646E-BMK0
    Manifakti:
    Samsung Semiconductor
    Detaye deskripsyon:
    4 Gb 256M x 16 1600 Mbps 1.35 V -40 ~ 95 °C 96FBGA Mass Production.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: MODULE, DDR3, HBM Flarebolt, GDDR6, GDDR5, DDR4, HBM Aquabolt and LPDDR3 ...
    Avantaj konpetitif:
    We specialize in Samsung Semiconductor K4B4G1646E-BMK0 electronic components. K4B4G1646E-BMK0 can be shipped within 24 hours after order. If you have any demands for K4B4G1646E-BMK0, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4B4G1646E-BMK0 Atribi pwodwi yo

    Nimewo Pati : K4B4G1646E-BMK0
    Manifakti : Samsung Semiconductor
    Deskripsyon : 4 Gb 256M x 16 1600 Mbps 1.35 V -40 ~ 95 °C 96FBGA Mass Production
    Seri : DDR3
    dansite : 4 Gb
    Org. : 256M x 16
    vitès : 1600 Mbps
    Voltage : 1.35 V
    Tanperatur. : -40 ~ 95 °C
    Pake : 96FBGA
    pwodwi dènye nouvèl : Mass Production

    Dènye nouvèl

    High Bandwidth Memory is Catching on for Data-intensive Computing
    Samsung Launches Industry’s First 12Gb LPDDR4 DRAM
    Samsung Enhances Functional Safety to its Automotive Semiconductors with ISO 26262 Certification
    An Exclusive Look Inside Samsung’s Memory Exhibit at MWC
    Samsung’s Newest ISOCELL Image Sensor Enables Mobile Devices to ‘Slow Down’ Time
    Samsung Now Mass Producing Industry’s Most Advanced 4Gb DDR3, Using 20 Nanometer Process Technology
    Samsung Honored for Outstanding Design and Engineering with 36 CES 2018 Innovation Awards
    Samsung Now Mass Producing Industry’s First, 20-Nanometer 6Gb LPDDR3 Mobile DRAM
    Autonomous Driving and the Quest for Safety
    The Ultra-Low Latency SSD, Z-SSD
    Samsung Electronics Introduces New High Bandwidth Memory Technology Tailored to Data Centers, Graphic Applications, and AI
    Evolving Mobile Solutions: Samsung at MWC 2018
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    Pati cho