Vishay Siliconix - IRFS11N50ATRR

KEY Part #: K6414172

[12846PC Stock]


    Nimewo Pati:
    IRFS11N50ATRR
    Manifakti:
    Vishay Siliconix
    Detaye deskripsyon:
    MOSFET N-CH 500V 11A D2PAK.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - JFETs, Transistors - Bipolè (BJT) - Arrays, Tiristors - TRIACs, Transistors - FETs, MOSFETs - Arrays, Diodes - RF, Diodes - Zener - Arrays and Diodes - Zener - Single ...
    Avantaj konpetitif:
    We specialize in Vishay Siliconix IRFS11N50ATRR electronic components. IRFS11N50ATRR can be shipped within 24 hours after order. If you have any demands for IRFS11N50ATRR, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    IRFS11N50ATRR Atribi pwodwi yo

    Nimewo Pati : IRFS11N50ATRR
    Manifakti : Vishay Siliconix
    Deskripsyon : MOSFET N-CH 500V 11A D2PAK
    Seri : -
    Estati Pati : Obsolete
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 500V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 11A (Tc)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
    RD sou (Max) @ Id, Vgs : 520 mOhm @ 6.6A, 10V
    Vgs (th) (Max) @ Id : 4V @ 250µA
    Chaje Gate (Qg) (Max) @ Vgs : 52nC @ 10V
    Vgs (Max) : ±30V
    Antre kapasite (Ciss) (Max) @ Vds : 1423pF @ 25V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 170W (Tc)
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Surface Mount
    Pake Aparèy Founisè : D2PAK
    Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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