Vishay Semiconductor Diodes Division - SS33HE3_B/I

KEY Part #: K6453666

[13498PC Stock]


    Nimewo Pati:
    SS33HE3_B/I
    Manifakti:
    Vishay Semiconductor Diodes Division
    Detaye deskripsyon:
    DIODE SCHOTTKY 30V 3A DO214AB.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Bipolè (BJT) - Arrays, Transistors - IGBTs - Arrays, Diodes - Rèkteur - Arrays, Transistors - IGBTs - Modil yo, Transistors - Bipolè (BJT) - Single, Transistors - Pwogramasyon Unijunction and Diodes - RF ...
    Avantaj konpetitif:
    We specialize in Vishay Semiconductor Diodes Division SS33HE3_B/I electronic components. SS33HE3_B/I can be shipped within 24 hours after order. If you have any demands for SS33HE3_B/I, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    SS33HE3_B/I Atribi pwodwi yo

    Nimewo Pati : SS33HE3_B/I
    Manifakti : Vishay Semiconductor Diodes Division
    Deskripsyon : DIODE SCHOTTKY 30V 3A DO214AB
    Seri : Automotive, AEC-Q101
    Estati Pati : Active
    Kalite dyòd : Schottky
    Voltage - DC Ranvèse (Vr) (Max) : 30V
    Kouran - Mwayèn Rèktifye (Io) : 3A
    Voltage - Forward (Vf) (Max) @ Si : 500mV @ 3A
    Vitès : Fast Recovery =< 500ns, > 200mA (Io)
    Ranvèse Tan Reverse (trr) : -
    Kouran - Fèy Reverse @ Vr : 500µA @ 30V
    Kapasite @ Vr, F : -
    Mounting Kalite : Surface Mount
    Pake / Ka : DO-214AB, SMC
    Pake Aparèy Founisè : DO-214AB (SMC)
    Operating Tanperati - Junction : -55°C ~ 150°C

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