Manifakti :
Taiwan Semiconductor Corporation
Deskripsyon :
DIODE GEN PURP 1KV 1A SOD123FL
Voltage - DC Ranvèse (Vr) (Max) :
1000V
Kouran - Mwayèn Rèktifye (Io) :
1A
Voltage - Forward (Vf) (Max) @ Si :
1.1V @ 1A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
-
Kouran - Fèy Reverse @ Vr :
1µA @ 1000V
Kapasite @ Vr, F :
7pF @ 4V, 1MHz
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
SOD-123FL
Operating Tanperati - Junction :
-55°C ~ 150°C