[3179PC Stock]
- Nimewo Pati:
- SSM3K35MFV,L3F
- Manifakti:
- Toshiba Semiconductor and Storage
- Detaye deskripsyon:
- X34 PB-F VESM NCH S-MOS TRANSIST.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Single, Transistors - FETs, MOSFETs - Arrays, Tiristors - SCR, Diodes - Rèkteur - Arrays, Diodes - Rèkteur - Single, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Bipolè (BJT) - Arrays, Pre-partial and Transistors - Bipolè (BJT) - Arrays ...
- Avantaj konpetitif:
- We specialize in Toshiba Semiconductor and Storage SSM3K35MFV,L3F electronic components. SSM3K35MFV,L3F can be shipped within 24 hours after order. If you have any demands for SSM3K35MFV,L3F, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SSM3K35MFV,L3F Atribi pwodwi yo
Nimewo Pati :
SSM3K35MFV,L3F
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
X34 PB-F VESM NCH S-MOS TRANSIST
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
180mA (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
1.2V, 4V
RD sou (Max) @ Id, Vgs :
3 Ohm @ 50mA, 4V
Vgs (th) (Max) @ Id :
1V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
-
Vgs (Max) :
±10V
Antre kapasite (Ciss) (Max) @ Vds :
9.5pF @ 3V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
150mW (Ta)
Operating Tanperati :
150°C
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
VESM
Pake / Ka :
SOT-723
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