Vishay Semiconductor Diodes Division - V20120S-M3/4W

KEY Part #: K6427921

V20120S-M3/4W Pricing (USD) [155247PC Stock]

  • 1 pcs$0.25141
  • 1,000 pcs$0.25016

Nimewo Pati:
V20120S-M3/4W
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE SCHOTTKY 20A 120V TO-220AB. Schottky Diodes & Rectifiers 20A,120V,TRENCH SKY RECT.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - JFETs, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Bipolè (BJT) - RF, Diodes - Zener - Arrays, Modil pouvwa chofè, Diodes - Rèkteur - Single, Tiristors - TRIACs and Diodes - Bridge rèktifikateur ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division V20120S-M3/4W electronic components. V20120S-M3/4W can be shipped within 24 hours after order. If you have any demands for V20120S-M3/4W, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

V20120S-M3/4W Atribi pwodwi yo

Nimewo Pati : V20120S-M3/4W
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE SCHOTTKY 20A 120V TO-220AB
Seri : Automotive, AEC-Q101
Estati Pati : Active
Kalite dyòd : Schottky
Voltage - DC Ranvèse (Vr) (Max) : 120V
Kouran - Mwayèn Rèktifye (Io) : 20A
Voltage - Forward (Vf) (Max) @ Si : 1.33V @ 20A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : -
Kouran - Fèy Reverse @ Vr : 250µA @ 120V
Kapasite @ Vr, F : -
Mounting Kalite : Through Hole
Pake / Ka : TO-220-3
Pake Aparèy Founisè : TO-220AB
Operating Tanperati - Junction : -40°C ~ 150°C

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