IXTN600N04T2 Pricing (USD) [3731PC Stock]
- 1 pcs$12.77318
- 10 pcs$11.81369
- 100 pcs$10.08933
- Nimewo Pati:
- IXTN600N04T2
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET N-CH 40V 600A SOT-227.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - RF, Diodes - Zener - Single, Transistors - IGBTs - Modil yo, Transistors - IGBTs - Single, Transistors - Pwogramasyon Unijunction, Transistors - Bipolè (BJT) - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial and Diodes - Bridge rèktifikateur ...
- Avantaj konpetitif:
- We specialize in IXYS IXTN600N04T2 electronic components. IXTN600N04T2 can be shipped within 24 hours after order. If you have any demands for IXTN600N04T2, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTN600N04T2 Atribi pwodwi yo
Nimewo Pati :
IXTN600N04T2
Manifakti :
IXYS
Deskripsyon :
MOSFET N-CH 40V 600A SOT-227
Seri :
GigaMOS™, TrenchT2™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
40V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
600A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
1.05 mOhm @ 100A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
590nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
40000pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
940W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Chassis Mount
Pake Aparèy Founisè :
SOT-227B
Pake / Ka :
SOT-227-4, miniBLOC
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