Infineon Technologies - IRLZ24NPBF

KEY Part #: K6402993

IRLZ24NPBF Pricing (USD) [82036PC Stock]

  • 1 pcs$0.43900
  • 10 pcs$0.38256
  • 100 pcs$0.27910
  • 500 pcs$0.20674
  • 1,000 pcs$0.16539

Nimewo Pati:
IRLZ24NPBF
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET N-CH 55V 18A TO-220AB.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Transistors - IGBTs - Single, Diodes - Bridge rèktifikateur, Transistors - Pwogramasyon Unijunction, Diodes - Rèkteur - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tiristors - SCR and Tiristors - SCR - Modil yo ...
Avantaj konpetitif:
We specialize in Infineon Technologies IRLZ24NPBF electronic components. IRLZ24NPBF can be shipped within 24 hours after order. If you have any demands for IRLZ24NPBF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRLZ24NPBF Atribi pwodwi yo

Nimewo Pati : IRLZ24NPBF
Manifakti : Infineon Technologies
Deskripsyon : MOSFET N-CH 55V 18A TO-220AB
Seri : HEXFET®
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 55V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 18A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4V, 10V
RD sou (Max) @ Id, Vgs : 60 mOhm @ 11A, 10V
Vgs (th) (Max) @ Id : 2V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 15nC @ 5V
Vgs (Max) : ±16V
Antre kapasite (Ciss) (Max) @ Vds : 480pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 45W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-220AB
Pake / Ka : TO-220-3