[3044PC Stock]
- Nimewo Pati:
- CPMF-1200-S080B
- Manifakti:
- Cree/Wolfspeed
- Detaye deskripsyon:
- MOSFET N-CHANNEL 1200V 50A DIE.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Single, Transistors - Bipolè (BJT) - Single, Transistors - Bipolè (BJT) - RF, Diodes - RF, Diodes - Rèkteur - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors), Tiristors - SCR and Transistors - FETs, MOSFETs - Arrays ...
- Avantaj konpetitif:
- We specialize in Cree/Wolfspeed CPMF-1200-S080B electronic components. CPMF-1200-S080B can be shipped within 24 hours after order. If you have any demands for CPMF-1200-S080B, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
CPMF-1200-S080B Atribi pwodwi yo
Nimewo Pati :
CPMF-1200-S080B
Manifakti :
Cree/Wolfspeed
Deskripsyon :
MOSFET N-CHANNEL 1200V 50A DIE
Seri :
Z-FET™
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
SiCFET (Silicon Carbide)
Drenaj nan Voltage Sous (Vdss) :
1200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
50A (Tj)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
20V
RD sou (Max) @ Id, Vgs :
110 mOhm @ 20A, 20V
Vgs (th) (Max) @ Id :
4V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
90.8nC @ 20V
Vgs (Max) :
+25V, -5V
Antre kapasite (Ciss) (Max) @ Vds :
1915pF @ 800V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
313mW (Tj)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
Die
Pake / Ka :
Die
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